symbol max p-channe l unit s v ds v v gs v i dm t j , t stg c symbol devic e typ ma x unit s n-ch 48 62.5 c/w n-ch 74 110 c/w r jl n-ch 35 40 c/w p-ch 48 62.5 c/w p-ch 74 110 c/w r jl p-ch 35 40 c/w maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state -20 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range a continuous drain current a t a =25c i d t a =70c pulsed drain current b w 6.9 5.8 30 2 1.44 -4.2 -5 2 1.44 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 30 -30 20 drain-source voltage 20 gate-source voltage thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a ao4604 complementary enhancement mode field effect transistor features n-channel p-channel v ds (v) = 30v -30v i d = 6.9a (v gs =10v) -5a (v gs = -10v) r ds(on) r ds(on) < 28m ? (v gs =10v) < 52m ? (v gs = -10v) < 42m ? (v gs =4.5v) < 87m ? (v gs = -4.5v) 100% rg tested! general description the ao4604 uses advanced trench technology mosfets to provide excelle n r ds(on) and low gate charge. the complementary mosfets may be used in power inverters, and other applications. ao4604 and ao4604l are electrically identical. -rohs compliant -ao4604l is halogen free g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g2 d2 s2 g1 d1 s1 n-channe l p-channel soic-8 top view bottom view alpha & omega semiconductor, ltd.
ao4604 symbol min typ max units bv dss 30 v 0.004 1 t j =55c 5 i gss 100 na v gs(th) 1 1.9 3 v i d(on) 20 a 22.5 28 t j =125c 31.3 38 34.5 42 m w g fs 10 15.4 s v sd 0.76 1 v i s 3 a c iss 680 820 pf c oss 102 pf c rss 77 pf r g 1.2 2 w q g (10v) 13.84 17 nc q g (4.5v) 6.74 8.1 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 ns t r 4.1 ns t d(off) 20.6 ns t f 5.2 ns t rr 16.5 20 ns q rr 7.8 nc thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascritical componentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice i f =6.9a,di/dt=100a/ m s i f =6.9a,di/dt=100a/ m s n-channel: electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drainsourcebreakdownvoltage i d =250 m a,v gs =0v i dss zerogatevoltagedraincurrent v ds =24v,v gs =0v m a gatebodyleakagecurrent v ds =0v,v gs =20v gatethresholdvoltage v ds =v gs i d =250 m a onstatedraincurrent v gs =4.5v,v ds =5v r ds(on) staticdrainsourceonresistance v gs =10v,i d =6.9a m w v gs =4.5v,i d =5.0a v gs =0v,v ds =0v,f=1mhz forwardtransconductance v ds =5v,i d =6.9a diodeforwardvoltage i s =1a maximumbodydiodecontinuouscurrent dynamic parameters inputcapacitance v gs =0v,v ds =15v,f=1mhz outputcapacitance gatedraincharge reversetransfercapacitance turnonrisetime turnoffdelaytime gateresistance bodydiodereverserecoverytime bodydiodereverserecoverycharge turnofffalltime switching parameters totalgatecharge totalgatecharge gatesourcecharge turnondelaytime v gs =10v,v ds =15v,r l =2.2 w , r gen =3 w v gs =10v,v ds =15v,i d =6.9a a:thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thevaluein anyagivenapplicationdependsontheuser'sspecificboarddesign.thecurrentratingisbasedonthet 10sthermalresistancerating. b:repetitiverating,pulsewidthlimitedbyjunctiontemperature. c.ther q ja isthesumofthethermalimpedencefromjunctiontoleadr q jl andleadtoambient. d.thestaticcharacteristicsinfigures1to6areobtainedusing80 m spulses,dutycycle0.5%max. e.thesetestsareperformedwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thesoacurve providesasinglepulserating. rev4:jan2009 alpha&omegasemiconductor,ltd.
ao4604 n-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e05 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =5a 125c 25c 25c i d =5a 5v 6v alpha&omegasemiconductor,ltd.
ao4604 n-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 14 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z q q q q ja normalized transient thermal resistance c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =6.9a singlepulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 m s alpha&omegasemiconductor,ltd.
ao4604 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & w aveform ig v g s - + v d c d u t l v g s v d s isd isd d io d e r e c o v e ry t e st c irc u it & w a ve fo rm s v d s - v d s + i f d i/d t i r m rr v d d v d d q = - id t t rr - + v d c d u t v d d v g s v d s v g s r l r g v g s v d s 1 0 % 9 0 % r e s is tiv e s w itch in g t e s t c irc u it & w a v e fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff alpha & omega semiconductor, ltd.
ao4604 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -1.8 -3 v i d(on) -20 a 39 52 t j =125c 54 70 67 87 m w g fs 6 8.6 s v sd -0.77 -1 v i s -2.8 a c iss 700 900 pf c oss 120 pf c rss 75 pf r g 10 15 w q g (10v) 14.7 19 nc q g (4.5v) 7.6 10 nc q gs 2 nc q gd 3.8 nc t d(on) 8.3 ns t r 5 ns t d(off) 29 ns t f 14 ns t rr 23.5 30 ns q rr 13.4 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =-15v, f=1mhz input capacitance output capacitance turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3 w , r gen =3 w turn-off fall time turn-on delaytime switching parameters total gate charge (4.5v) gate source charge gate drain charge total gate charge (10v) v gs =-10v, v ds =-15v, i d =-5a m w v gs =-4.5v, i d =-4a i s =-1a,v gs =0v v ds =-5v, i d =-5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-24v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current p-channel: electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-5a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-10v, i d =-5a reverse transfer capacitance i f =-5a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4: jan 2009 alpha & omega semiconductor, ltd.
ao4604 p-channel: typical electrical and thermal characteristics 0 5 10 15 20 0.00 1.00 2.00 3.00 4.00 5.00 -v ds (volts) figure 1: on-region characteristics -i d (a) v gs =-3v -3.5v -4v -10v -4.5v -5v 0 2 4 6 8 10 0 1 2 3 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v 20 40 60 80 100 1 3 5 7 9 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs =-4.5v v gs =-10v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 8.00e-01 1.00e+00 1.20e+00 1.40e+00 1.60e+00 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 20 40 60 80 100 120 140 160 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) i d =-5a 25c 125c i d =-5a -2.5v -6v alpha & omega semiconductor, ltd.
ao4604 p-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z q q q q ja normalized transient thermal resistance 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd.
ao4604 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v ig v gs - + v d c d u t l v gs isd d iod e r ecove ry t est c ircu it & w ave form s v ds - v ds + d i/d t r m rr v d d v d d q = - idt t rr -isd -v ds f -i -i v dc d u t v dd v gs v ds v gs r l r g r e sistive s w itch in g t e st c ircuit & w a ve fo rm s - + v gs v ds t t t t t t 90% 10% r on d(o ff) f o ff d(on ) alpha & omega semiconductor, ltd.
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